Microelectronics - Space Park
Northrop Grumman’s Space Park foundry is a leader in the design and manufacture of III-V compound semiconductors.
Microelectronics Products and Services
Our microelectronics products enable missions that range from advanced satellite communications and complex astrophysics systems to commercial applications, such as smartphones and ground-based communications infrastructure.
Our full suite of foundry services turns concepts into reality.
The Northrop Grumman Space Park foundry in Redondo Beach, California, processes hetero-junction bipolar transistor and high electron mobility transistor monolithic microwave and millimeter-wave integrated circuits. The foundry focuses on products that are microscopic, modular, high speed, and low in power consumption and temperature.
Microelectronics Products and Services DatasheetFoundry Services and Products
- Design
- On-wafer tests
- Assembly
- Power amplifiers
- Low noise amplifiers
- Mixers and multipliers
- Switches
Technologies
- Gallium Nitride (GaN) HEMT
- High power and high survivability
- Gallium Arsenide (GaAs) HEMT
- Linear power and low noise
- Indium Phosphide (InP) HEMT
- Low noise and high frequency
- Indium Phosphide (InP) HBT
- High speed digital and mixed signals
- DAHI (Diverse Accessible Heterogeneous Integration)
- Multi-layer Wafer Packaging
We Offer:
- 100mm wafer-size fabrication facilities
- In-house multi-wafer Molecular Beam Epitaxy (MBE)
- Process design kits (PDK) with synchronized layout and model sets
- Processes designed for high-reliability applications
- Department of Defense trusted foundry
- Multi-customer shared mask foundry products and services
- On-wafer RF testing beyond 110 GHz
Microelectronics to Macroelectronics
- Semiconductor material development
- Integrated circuit design and fabrication
- Multi-chip module assembly
- Multi-function hardware integration enabling satellites to conduct space missions
Products
Before handling, assembling or testing our GaAs MMICs please review our "GaAs IC Die Handling, Assembly and Testing Techniques" application note.
Power Amplifiers
Part | Description | Frequency (GHz) | Gain (dB) | P1dB (dBm) | PSat (dBm) | Availability |
---|---|---|---|---|---|---|
APH668 | GaAs HEMT High Power Amplifier | 71 - 76 | 19 | TBD | 28 | Stock |
APH670 | GaAs HEMT Medium Power Amplifier | 71 - 76 | 21 | TBD | 25 | Stock |
APH667 |
GaAs HEMT High Power Amplifier | 81 - 86 | 17 | TBD | 25.5 | Stock |
APH669 | GaAs HEMT Medium Power Amplifier | 81 - 86 | 16 | 20 | 23.5 | Stock |
APH482 | HEMT High Power Amplifier | 92 - 96 | 7.5 | 22 | 25 | Stock |
APH631 | HEMT Power Amplifier | 92 - 96 | 23 | 15 | 18 | Stock |
APH635 | HEMT Power Amplifier | 92 - 95 | 17 | 20 | 22 | Stock |
GaN Power Amplifiers
Part | Description | Frequency (GHz) | Gain (dB) | P1dB (dBm) | Psat (dBm) | Form | Availability |
---|---|---|---|---|---|---|---|
APN267 | GaN HEMT Distributed Amplifier | 2-18 | 10 | 35 | 38 | Die | Stock |
APN270 | GaN HEMT Power Amplifier | 9-13.2 | 12 | 39 | 41 | Die | Stock |
APN252 | GaN HEMT Driver Amplifier | 10-14 | 25.5 | 34 | 38 | Die | Stock |
APN250 | GaN HEMT Power Amplifier | 10-14 | 13 | 39 | 42 | Die | Stock |
APN226 | GaN HEMT Power Amplifier | 13-16 | 20 | 36 | 39.5 | Die | Stock |
APN232 | GaN HEMT Power Amplifier | 13.5-15.5 | 13 | 38.5 | 42 | Die | Stock |
APN237 | GaN HEMT Dual Channel Power Amplifier | 13.5-15.5 | 12.5 | 40.5 | 44 | Die | Stock |
APN279 | GaN HEMT Power Amplifier | 16-20.8 | 17 | 39.5 | 42.5 | Die | Stock |
APN187 | GaN HEMT Power Amplifier | 17-22 | 17 | 40 | 42 | Die/Tab | Stock |
APN149 | GaN HEMT Power Amplifier | 18-23 | 20 | 38 | 39 | Die/Tab | Stock |
APN243 | GaN HEMT Power Amplifier | 23-28 | 20 | 38 | 40.5 | Die | Stock |
APN244 | GaN HEMT Power Amplifier | 23-28 | 21 | 37 | 39 | Die | Stock |
APN228 | GaN HEMT Power Amplifier | 27-32 | 19.5 | 39 | 41.2 | Die/Tab | Stock |
APN229 | GaN HEMT Power Amplifier | 27-32 | 20 | 17 | 39 | Die/Tab | Stock |
APN292 | GaN HEMT Power Amplifier | 27-30 | 20 | 42 | 45.5 | Die | Stock |
APN311 | GaN HEMT Power Amplifier | 27-31 | 20 | 43 | 45 | Die | Stock |
APN173 | GaN HEMT Power Amplifier | 34-36 | 19.5 | TBD | 37.5 | Die | Stock |
APN236 | GaN HEMT Power Amplifier | 34.5-35.5 | 16 | 38 | 40 | Die | Stock |
APN167 | GaN HEMT Power Amplifier | 43-46 | 20 | 35.5 | 38.5 | Die | Stock |
APN318 | GaN HEMT Power/Driver Amplifier | 47.2-51.4 | 15 | - | 40 | Die | Pre-Production |
APN319 | GaN HEMT Power/Driver Amplifier | 47.2-51.4 | 16 | - | 37 | Die | Pre-Production |
APN352 | GaN HEMT Power/Driver Amplifier | 47-51 | 15.5 | 40 | 40.5 | Die | Stock |
APN353 | GaN HEMT Power/Driver Amplifier | 47-51 | 14 | 37.5 | 39 | Die | Stock |
Low Noise Amplifiers
Part | Description | Frequency (GHz) | Gain (dB) | NF (dB) | P1dB (dBm) | Availability |
---|---|---|---|---|---|---|
ALP302_0 | InP HEMT Low Noise Amplifier | 17.2 - 21.2 | 33 | 0.8 | Stock | |
ALP302_A | InP HEMT Low Noise Amplifier | 17.2 - 21.2 | 32.5 | 0.8 | Stock | |
ALP291 | InP HEMT Low Noise Amplifier | 71 - 86 | 29 | 2.7 | 3 | Stock |
ALP275 | InP HEMT Low Noise Amplifier | 71 - 96 | > 26 | 3 | 4 | Stock |
ALP280 | InP HEMT Low Noise Amplifier | 80 - 100 | 29 | 2 | 3 | Stock |
ALP283 | InP HEMT Low Noise Amplifier | 80 - 100 | 29 | 2.5 | 3 | Stock |
ALH495 (-LN) | HEMT Low Noise Amplifier | 80 - 100 | 18 | 4.3 | 3 | Stock |
ALH495 (-GB) | HEMT Gain Block Amplifier | 80 - 100 | 18 | 4.8 | 3 | Stock |
ALH497 (-LN) | HEMT Low Noise Amplifier | 80 - 100 | 17 | 4.2 | 0 | Stock |
ALH497 (-GB) | HEMT Gain Block Amplifier | 80 - 100 | 17 | 4.9 | 0 | Stock |
ALH503 (-LN) | HEMT Low Noise Amplifier | 80 - 100 | 16 | 4.2 | 0 | Stock |
ALH503 (-GB) | HEMT Gain Block Amplifier | 80 - 100 | 16 | 4.9 | 0 | Stock |
ALH504 (-LN) | HEMT Low Noise Amplifier | 82 - 102 | 18 | 4.1 | 3 | Stock |
ALH504 (-GB) | HEMT Gain Block Amplifier | 82 - 102 | 18 | 4.8 | 3 | Stock |
ALP292 | InP HEMT Low Noise Amplifier | 90 - 112 | 30 | 3 | 3 | Stock |
ALH394 | HEMT Low Noise Amplifier | 92 - 96 | 17 | 5 | 5 | Stock |
Mixers
Part | Description | RF Freq (GHz) | LO Freq (GHz) | IF Freq (GHz) | CL (dB) | Availability |
---|---|---|---|---|---|---|
MDJ183 | InP Schottky Diode Mixer | 17 - 32 | 17 - 32 | DC-10 | 8 | Pre-Production |
MDJ169 | InP Schottky Diode Mixer | 24 - 44 | 24 - 44 | DC-15 | 7.5 | Pre-Production |
MDJ178 | InP Schottky Diode Mixer | 37 - 61 | 37 - 61 | DC-15 | 8.5 | Pre-Production |
MDJ187 | InP Schottky Diode Mixer | 40 - 76 | 40 - 76 | DC-25 | 9 | Pre-Production |
MBH100 | HEMT Schottky Diode Mixer | 91 - 99 | 91 - 99 | DC-3 | 12 | Stock |
MDJ191 | InP Schottky Diode Mixer | 92 - 97 | 92 - 97 | DC-20 | 8.5 | Pre-Production |
Multipliers & Switches
Part | Description | Freq Out (GHz) | Freq In (GHz) | RF Input (dBm) | CG/CL/IL(dB) | Availability |
---|---|---|---|---|---|---|
SF0083 | SLCFET SPDT Switch | 0.5 – 25 | NA | NA | 0.38 / IL | Stock |
XDH150 | HEMT X2 Multiplier | 92 - 96 | 46 - 48 | -5 | 3 / CG | Stock |
SDH148 | HEMT SPDT Switch | 80 - 100 | NA | NA | 3 / IL | Stock |
Modules
Part | Description | Frequency (GHz) | Gain (dB) | NF (dB) | P1dB (dBm) | Psat (dBm) | Form | Availability |
---|---|---|---|---|---|---|---|---|
MLA1101 | 140 GHz Low Noise Amplifier | 130-140 | 20 | 6 | TBD | TBD | Waveguide Module | Stock |
MGA2101 | 225-325 GHz Gain Block Module | 225-325 | 16 | 8 | TBD | 0 | Waveguide Module | Stock |
Complete Fabrication Cycle
Process Selector Guide
Parameter/ Technology | 1um | 0.8 um | 0.6 um | 0.15 um | 0.1 um | 0.1 um | 0.2 um |
power InP | digital InP | digital InP | GaAs Power | GaAs | InP | GaN | |
HBT | HBT (2Met) | HBT (4Met) | PHEMT | PHEMT | PHEMT | HEMT | |
Ft (peak) | 80 GHz | 160 GHz | >250 GHz | 80 GHz | 120 GHz | 180 GHz | 60 GHz |
Fmax (peak) | 150 GHz | >200 GHz | >300 GHz | 200 GHz | 250 GHz | 350 GHz | 200 GHz |
Beta/Gm | 25 | 80 | 80 | 550 | 650 | 1200 | 350 |
mS / mm | mS / mm | mS / mm | mS / mm | ||||
Vce / Vds (Max) | 7.5V | 5V | 4V | 5V | 4V | 1.2V | 28V |
Current Density (Max) | 0.7 | 1.5 | 2.5 | 250 | 250 | 150 | 250 |
mA / um² | mA / um² | mA / um² | mA / mm | mA / mm | mA/ mm | mA / mm | |
Wafer Thickness | 75 um | 75 um | 75 um | 50 & 100 um | 50 & 100 um | 75 um | 100 um |
Airbridged Metal Available | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
Backside Vias | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
Diode Type | Schottky | Schottky | Schottky | Gate Source | Gate Source | Gate Source | NA |
Wafer Size | 100 mm | 100 mm | 100 mm | 100 mm | 100 mm | 100 mm | 100 mm |
Highlight/ Application | • Mixed Signal designs | • Fiber Optic applications up to 25 Gbps | • Fiber Optic applications up to 40 & 100 Gbps | • High power amps < 5W up to 60 GHz | • Low Noise Amplifier up to 100 GHz | • Very Low noise Amplifiers | • Very high power amplifiers < 10W up to 40 GHz |
• ADC/DAC | • High Speed digital circuitry | • High Speed digital circuitry | • Linear amplifiers | • Power amplifiers < 1W up to 100 GHz | • mmW sensors | ||
• Driver amplifiers | • Low power dissipation | ||||||
• Up/Dwn cnverters | • Up/Dwn cnverters | ||||||
Commercial Qualification Date | TBD | NOW | NOW | NOW | NOW | NOW | Q3 2015 |
Design Resources
We offer a variety of tools including design kits and manuals to help our customers build the product they need.
Technology | ADS* | AWR | Spice | Cadence | GDSII | Design Manual |
---|---|---|---|---|---|---|
4mil GaAs 0.1um Low Noise | 11-2006 | 7-2011 | NA | V1.7 | 2008 | |
2mil GaAs 0.1um Power | 1-2007 | 7-2011 | NA | ? | 2008 | |
4mil GaAs 0.1um Power | 8-2010 | 7-2011 | NA | V1.7 | 2008 | |
4mil GaAs 0.15um | 6-2011 | 7-2011 | NA | V1.7 | 2006 | |
2mil GaAs 0.15um | 9-2008 | 7-2011 | NA | ? | 2006 | |
InP HBT: IH2 – Digital | 11-2009 | NA | 11-2009 | V1.2 | TBD | |
InP HBT: IH2-Power | TBD | NA | TBD | V1.2 | TBD | |
InP HBT: IH4 | 9-2009 | NA | 11-2009 | V1.5 | TBD | |
InP HEMT | 7-2011 | TBD | NA | ? | TBD | |
GaN 0.25um | 3-2011 | TBD | NA | V1.7 | 2009 (Draft) |
Starry Nite Multi-project Wafer (MPW) Runs
Northrop Grumman was awarded the State-of-the-Art Radio Frequency Gallium Nitride (Starry Nite) program in Dec. 2021. As a part of the Starry Nite program, Northrop Grumman will mature a 90 nm Gallium Nitride node capable of W-band operation to manufacturing readiness level (MRL) 8. Throughout the program, foundry access to the 90 nm GaN node will be provided to external and internal designers through multi-project wafer (MPW) runs.
The 90 nm GaN technology is not a frozen process. Three model updates are planned during the program. Preliminary technology performance parameters are provided in the table.
Items of note:
- The Starry Nite program only pays for mask and fabrication
- Testing and subdicing available at additional cost
- ADS PDK supplied after NDA. Contact us for details on models for other design tools.
- Government purpose rights to the design may be required to participate
- All designs will be archived into a government repository
Preliminary Technology Performance Parameters
Technology | fT (GHz) | fmax (GHz) | Gm (mS/mm) | VDS,max (V) | Imax (A/mm) | Wafer Thickness (µm) | Airbridged Metal Available | Backside Vias | Wafer Size (mm) |
---|---|---|---|---|---|---|---|---|---|
90 nm GaN HEMT | 100 | >250 | 525 | 15 - 18 | 1.2 | 50 um | Yes | Yes | 100 |
2024-2027 Starry Nite MPW Runs Calendar
STARRY NITE MPWs |
2024 |
2025 |
|||||||||||||||||||||||||
Q1 | Q2 | Q3 | Q4 | Q1 | Q2 | Q3 | Q4 | ||||||||||||||||||||
Foundry | Process | Offering | Name | Jan | Feb | Mar | Apr | May | Jun | Jul | Aug | Sep | Oct | Nov | Dec | Jan | Feb | Mar | Apr | May | Jun | Jul | Aug | Sep | Oct | Nov | Dec |
NG |
GaN09 | 90nm | MPW1 | ||||||||||||||||||||||||
MPW2 | |||||||||||||||||||||||||||
MPW3 | |||||||||||||||||||||||||||
MPW4 | 24 | ||||||||||||||||||||||||||
MPW5 | 23 | 18 | |||||||||||||||||||||||||
MPW7 | 1 | 9 | 18 | 11 | |||||||||||||||||||||||
MPW9 | 9 | 7 | 16 | 18 | |||||||||||||||||||||||
GaN09 +AIC | MPW6 | 27 | 24 | 16 | 12 | ||||||||||||||||||||||
MPW8 | 16 | 14 | 6 | 1 | |||||||||||||||||||||||
GaN09-LN | MPW1-LN | 26 | 25 | 3 | 24 | ||||||||||||||||||||||
MPW2-LN | 1 | 9 | 18 | 11 | |||||||||||||||||||||||
MPW3-LN | 6 | 3 | 14 | 8 | |||||||||||||||||||||||
MPW4-LN | 27 | 25 | 3 | ||||||||||||||||||||||||
GaN09-LN +AIC | MPW5-LN | 22 | 19 | 12 | |||||||||||||||||||||||
MPW6-LN | 31 | 21 |
STARRY NITE MPWs |
2026 |
2027 |
|||||||||||||||||||||||||
Q1 | Q2 | Q3 | Q4 | Q1 | Q2 | Q3 | Q4 | ||||||||||||||||||||
Foundry | Process | Offering | Name | Jan | Feb | Mar | Apr | May | Jun | Jul | Aug | Sep | Oct | Nov | Dec | Jan | Feb | Mar | Apr | May | Jun | Jul | Aug | Sep | Oct | Nov | Dec |
NG |
GaN09 | 90nm | MPW1 | ||||||||||||||||||||||||
MPW2 | |||||||||||||||||||||||||||
MPW3 | |||||||||||||||||||||||||||
MPW4 | |||||||||||||||||||||||||||
MPW5 | |||||||||||||||||||||||||||
MPW7 | |||||||||||||||||||||||||||
MPW9 | |||||||||||||||||||||||||||
GaN09 +AIC | MPW6 | ||||||||||||||||||||||||||
MPW8 | |||||||||||||||||||||||||||
GaN09-LN | MPW1-LN | ||||||||||||||||||||||||||
MPW2-LN | |||||||||||||||||||||||||||
MPW3-LN | |||||||||||||||||||||||||||
MPW4-LN | 26 | ||||||||||||||||||||||||||
GaN09-LN +AIC | MPW5-LN | 9 | |||||||||||||||||||||||||
MPW6-LN | 20 | 15 |
The steps for the MPW runs are:
- Application deadline – Complete application form and submit by application deadline
- Performer space awarded – Government will use completed applications to decide on which designs to run on the mask and notify designers
- Design submission – Approved designs must be submitted by the submission date on the calendar
- Die delivered – At completion of fabrication, die will be delivered to designers
Email us if interested in participating in a Starry Nite MPW Run: as-mps.sales@ngc.com
Application Notes and Technical Papers
Application Notes
Revision | Title |
---|---|
Jun. 2008 | 94 GHz Chipset |
Apr. 2008 | 94 GHz Selector Guide |
Apr. 2008 | GaAs IC Die Handling, Assembly and Testing Techniques |
Apr. 2008 | Effects of Hydrogen on Hermetically Packaged GaAs MMICs |
May 2012 | GaN Chip Handling, Assembly and Testing Techniques |
Jun. 2024 | Die on Tab Datasheet |
Presentations
Date | Title |
---|---|
2003 | Highly Linear and Compact MMW Phased Array Transmitters |
Technical Papers
Date | Forum | Title |
---|---|---|
2002 | GaAs MANTECH | GaAs Components for 60 GHz Wireless Communications Applications |
2001 | GaAs MANTECH | High-Reliability Deep Submicron GaAs Pseudomorphic HEMT MMIC Amplifiers |
1999 | IEEE RFIC Symposium | High Reliability Non-Hermetic 0.15 um GaAs Pseudomorphic HEMT MMIC Amplifiers |
Banned Substances Assessment
The following table lists the materials and substances that are present/not present in our products and processes.
This information is provided to assure our customers of the environmental impact of selecting products manufactured by Northrop Grumman.
Banned Substances | MMIC | GaAs Fabrication Process | MMIC | InP Fabrication Process |
---|---|---|---|---|
Asbestos | 0 ppm | 0 ppm | 0 ppm | 0 ppm |
Azo Dye | 0 ppm | 0 ppm | 0 ppm | 0 ppm |
Cadmium and Cadmium Compounds | 0 ppm | 0 ppm | 0 ppm | 0 ppm |
Chlorofluorcarbons (CFCs)/ Hydrochlorofluorocarbons (HCFC) | 0 ppm | 0 ppm | 0 ppm | 0 ppm |
Ethylene Glycol Monomethyl Ether and its acetate | 0 ppm | 0 ppm | 0 ppm | 0 ppm |
Ethylene Glycol Monoethyl Ether and its acetate | 0 ppm | 0 ppm | 0 ppm | 0 ppm |
Halogenated dioxins and furans | 0 ppm | 0 ppm | 0 ppm | 0 ppm |
Hexavalent Chromium and Hexavalent Chromium Compounds | 0 ppm | 0 ppm | 0 ppm | 144,000 ppm |
Lead and Lead Compounds | 0 ppm | 0 ppm | 0 ppm | 0 ppm |
Soldering with Lead | 0 ppm | 0 ppm | 0 ppm | 0 ppm |
Mercury and Mercury Compounds | 0 ppm | 0 ppm | 0 ppm | 0 ppm |
Short Chain Chlorinated Paraffins (C10-13, CI>50%) | 0 ppm | 0 ppm | 0 ppm | 0 ppm |
Perfluorooctanesiltonic Acids (PFOSs)/ Perfluorooctanoic Acids (PFOAs) | 0 ppm | 0 ppm | 0 ppm | 0 ppm |
Polybrominated Biphenyls (PBBs)/ Polybrominated Biphenyls Ethers (PBDEs) | 0 ppm | 0 ppm | 0 ppm | 0 ppm |
Polychlorinated Biphenyls(PCBs) | 0 ppm | 0 ppm | 0 ppm | 0 ppm |
Polychloroterphenyls and directives (PCTs) | 0 ppm | 0 ppm | 0 ppm | 0 ppm |
Radioactive Materials | 0 ppm | 0 ppm | 0 ppm | 0 ppm |
Tributyl tin (TBT) and Triphenyl tin (TPT) compounds | 0 ppm | 0 ppm | 0 ppm | 0 ppm |
*Northrop Grumman MPS reserves the right to update this list from time to time as products and services are changed or upgraded.
Last Updated 5/5/2008
About Us
Microelectronics Products and Services (MPS) provides commercial access to Northrop Grumman's state-of-the-art Advanced Semiconductor Foundry. The foundry has a history of facilitating technological advancements that have allowed Northrop Grumman to redefine the commercial telecommunications industry.
- Our advanced GaN processing created the highest output power at Ka-band frequencies.
- We provided the first GaAs chipsets for the V-band, E-band, and W-band frequency ranges.
- Our GaAs HEMT chipset (under the Velocium Products label) enabled the 23/26 and 38 GHz point-to-point wireless telecom market.
- Our GaAs HBT process sparked the cell phone power amplifier revolution of the late 1990s.
MPS continues to lead the way forward by leveraging its expertise in GaAs, InP, and GaN technologies to provide discriminating MMICs in wireless E-band telecom, W-band radar, and satcom high power amplifiers.
The MPS Difference
MPS is committed to quality and reliability across its vertically integrated semiconductor value chain, from raw materials and design to fabrication and testing.
These technologies have been developed with the goal of delivering a proven reliable product useable in defense critical applications. As such commercial companies can benefit from this commitment to quality and reliability. This commitment begins with the raw material (as Northrop performs its own epitaxial growth) thru design, fabrication and even in testing. Northrop Grumman's vertically integrated development process allows for a holistic view of reliability and quality.
Contact Us
Microelectronic Products and Services
Northrop Grumman Space Systems
One Space Park, D1/1024
Redondo Beach, CA 90278
USA
Telephone: +1-310-814-5000
Fax: +1-310-812-7011
Sales Inquiries: as-mps.sales@ngc.com
Contact Product Support: as-mps.sales@ngc.com